A Rational Fabrication Method for Low Switching-Temperature VO2

Due to its remarkable switching effect in electrical and optical properties, VO2 is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with rational deposition technique, still challenging. Here, we propose optimize simple fabrication method rich layers by oxidation metallic atmospheric air. It was shown that sufficiently broad annealing time window 3.0–3.5 h can be obtained at an optimal temperature 400 °C. The presence detected selected area diffraction transmission electron microscope. According dependent measurements, resistance contrast (R30 °C/R100 °C) varied between 44 68, whereas confirmed using situ spectroscopic ellipsometric measurement monitoring complex refractive indices. phase transition temperature, both angles, found 49 ± 7 °C, i.e., significantly lower than bulk 68 6